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  • Metalorganic compounds (jargon: metalorganics, metallo-organics) are a class of chemical compounds that contain metals and organic ligands.
  • Precursors are one of the compounds that participates in the chemical reaction that produces another compound.
  • Metal-organic (MO) chemicals or precursors are used in the epitaxial growth of LED semiconductor materials
  • Metal-organic (MO) chemicals or precursors provide the source of metallic elements such as gallium (Ga), indium (In) and aluminum (Al).
  • Development of metal organic precursors made significant contribution to the field of semiconductor growth.
  • Metal-organic (MO) chemicals specifically designed for the MOVPE or CBE process, have improved gas-phase and surface decomposition, leading to very thin high quality semiconductor films.
  • The tremendous expansion of metal-organic chemical vapor deposition process (MOCVD) is accounted for its ability to deposit at low temperature a wide variety of thin film materials keeping advantages of the conventional CVD process. The design and the selection of suitably tailored metal-organic precursors is a fundamental key to develop successfully an MOCVD process.
  • The incorporation efficiency (also called reactor efficiency) of trimethylgallium (TMGa) and trimethylaluminium (TMAl) precursors were calculated and then compare the ratio of molar flow rate of TMGa and TMAl and the ratio of growth rate of GaN and AlN epitaxial layer.
  • A novel method for deposition of metal oxide thin films, including Al2O3,ZrO2, MnOx, and RuOx were demonstrated where the metal-organic precursors and oxidizing agents are delivered in liquid and supercritical CO2.
  • Precursor films consisting of mixtures of titanium (n-butoxide)2(2-ethylhexanote)2 and barium 2-ethylhexanoate were spin coated from methyl isobutyl ketone (MIBK) solutions and used to directly deposit patterned mixed metal oxide dielectric pads using standard lithographic exposure tools and methods.
  • Deposition of crystalline alumina films at lower temperatures has demonstrated marginally higher promise with metal-organic precursor systems. These fall into three main categories: aluminum alkoxides, alkyl compounds, and acetylacetonates.
  • LNO layers were prepared by a wet chemical method from metal-organic precursors on Si and Al2O3 substrates..

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