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Information @ a Glance


  • Gallium is a chemical element that has the symbol Ga and atomic number 31.
  • A soft silvery metallic poor metal, gallium is a brittle solid at low temperatures but liquefies slightly above room temperature and will melt in the hand.
  • It occurs in trace amounts in bauxite and zinc ores.Most gallium is extracted from the crude aluminium hydroxide solution of the Bayer process for producing alumina and aluminium.
  • Gallium does not exist in free form in nature, nor do any high-gallium minerals exist to serve as a primary source of extraction of the element or its compounds.


  •  Gallium is used in glass with a high refraction coefficient; Ga2O3 - based glass is transparent for infrared waves.
  • Liquid gallium reflects 88% of incident light, the solid metal - just slightly less, so gallium is very useful in mirrors production, the glass surface of which may be just brushed by gallium.
  • The widebandgap semiconductor families, which include GaN, silicon carbide (SiC) and diamond, have long been touted for their potential superior performance in high-frequency and/or high-power applications.
  • Gallium compound is used in the production of several electronic parts such as diodes and transistors, made for voltage rectification, signal amplification, etc.

Synthesis & Extraction

  • The pyrolysis of organometallic precursors has already been demonstrated to be a powerful route to the synthesis of nanotubes and filled nanotubes.
  • Solvent extraction is a very effective method for the separation and concentration of metal cations, including the Group 13 metals, in solution.
  • As a crystallographic approach to evaluate the extraction mechanism of Ga3+ with H3tdmba and the chemical structure of the extracted Ga3+, crystal structure of H3tdmba4 was analyzed by using X-ray crystallography.
  • A solvent extraction process based on aqueous nitric acid and organic tri-butyl phosphate (TBP) has been suggested as a fully developed method for separating gallium from the plutonium.


  • The market forecast for both gallium nitride based optoelectronic and electronic devices is projected to grow to nearly $1.3 billion in 2004, and to more than $4.8 billion in 2009, compared with $420 million in 1999.
  • The electronic device market is forecast to begin in 2002 with modest shipments of RF/microwave and high-temperature devices, and to expand in subsequent years to include power switches, power rectifiers and high-voltage rectifiers.
  • The current status of gallium nitride (GaN) technology, reviews the present and future applications of GaN-based devices, and forecasts the device market for the next 10 years.
  • Overall market growth for GaAs devices will continue to be dependent primarily on the wireless markets, with the cellular handset market being the primary driver. Demand from other applications, such as automotive radar, will increase, but cellular handsets will still account for at least 33 percent of the GaAs device market in 2008.

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